Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Abstract

The simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 × 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 × 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24° of halo implant tilt angle and 9° of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 × 10 5 .