Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: Properties

Abstract

Hydrogenated amorphous silicon carbon nitride films were grown by plasma enhanced chemical vapor deposition (PECVD) technique. The flow rates of SiH 4, CH 4 and NH 3 gases were 6 sccm, 30 sccm and 8 sccm, respectively. The deposition temperatures were 350, 400 and 450°C. The RBS and ERD results showed that the concentrations of Si, C, N and H are practically the same in the films deposited at substrate temperatures in the range 350-450°C. In photoluminescence spectra we identified two peaks and assigned them to radiative transitions typical for amorphous materials, ie band to band and defect-related ones. The electrical characterization consists of I(V) measurement in sandwich configuration for voltages up to 100 V. From electrical characterization, it was found that with increased deposition temperature the resistivity of the amorphous SiCN film was reduced. © 2012 FEI STU.