Abstract
Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E 2(high) mode show strongly anisotropic behavior in smaller nanowires, which results from optical antenna effect. Raman enhancement (RE) per unit volume of E 2(high) increases with decreasing diameter of nanowires. Compared to the thin film, ∼200-fold increase of RE is observed in AlN nanowires having diameter less than 50 nm, which is far beyond the quantum confinement regime. Such a large RE can be attributed to the effects of resonant cavity and stimulated Raman scattering. © 2012 American Institute of Physics.
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CITATION STYLE
Hsu, H. C., Hsu, G. M., Lai, Y. S., Feng, Z. C., Tseng, S. Y., Lundskog, A., … Chen, L. C. (2012). Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects. Applied Physics Letters, 101(12). https://doi.org/10.1063/1.4753798
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