Design and fabrication of nanostructures silicon photodiode

Abstract

A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes, of nanostructure porous silicon prepared by laser assisted etching. Photoresponse was investigated in the wavelength range (400-850nm). A responsivity of (3A/W) was measured at (450 nm) with low value of dark current of about (1 μA /cm2) at 5 volt reverse bias. © Canadian Center of Science and Education.