High-resolution transmission electron microscopy observation of liquid-phase bonded aluminum/sapphire interfaces

Abstract

In this paper, we characterized aluminum/sapphire interface structure by using high-resolution transmission electron microscopy. It was found that step structures of sapphire formed at the aluminum/sapphire interfaces during the liquid-phase bonding. It was discovered that the addition of silicon in aluminum significantly reduces the step growth at the interface. Silicon was found to segregate and precipitate at the interface. These results suggest that the strong preference of silicon at the interface may inhibit the step growth reactions during liquid-phase bonding. © 2009 The Japan Institute of Metals.