Abstract
The location of Ge-doped Bi4V2O11 solid solutions in the Bi2O3-V2O5-GeO 2 ternary phase diagram has been determined; a more detailed study of the Bi4V2O11-Bi2GeO5 join has been carried out and the phase diagram presented. The main mechanisms for solid solution formation appear to involve substitution of both Ge and Bi into V sites, giving rise to the general formula Bi4+yV 2-2x-yGe2xO11-x-y: -0.04
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CITATION STYLE
Lee, C. K., Tan, M. P., & West, A. R. (1994). Ge-doped bismuth vanadate solid electrolytes: Synthesis, phase diagram and electrical properties. Journal of Materials Chemistry, 4(4), 525–528. https://doi.org/10.1039/jm9940400525
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