Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Abstract

Single electron trapping/de-trapping behavior is firstly observed and investigated in the contact resistive random access memory cell. By analyzing the random telegraph noise, the temperature-dependency of resistance levels and the high-temperature data retention behavior of the contact RRAM film are successfully explained. Detail analyses on the capture and emission of electrons in this contact RRAM cell provide further verifications for the proposed trap-induced resistive switching model. ©2010 IEEE.