High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate

Abstract

High-performance fully transparent bottom-gate type dual-layer (ITO/ TZO) channel thin-film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual-layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low Ioff of 1.5 × 10-11 A, a high on/off ratio of 5.78 × 10 7, a high saturation mobility μs of 292 cm2/ V·s, a high linear mobility μl of 105.4 cm2/V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage Vth of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs. © The Institution of Engineering and Technology 2014.