Manipulation of Subwavelength Periodic Structures Formation on 4H-SiC Surface with Three Temporally Delayed Femtosecond Laser Irradiations

Abstract

Controlling laser-induced periodic surface structures on semiconductor materials is of significant importance for micro/nanophotonics. We here demonstrate a new approach to form the unusual structures on 4H-SiC crystal surface under irradiation of three collinear temporally delayed femtosecond laser beams (800 nm wavelength, 50 fs duration, 1 kHz repetition), with orthogonal linear polarizations. Different types of surface structures, two-dimensional arrays of square islands (670 nm periodicity) and one-dimensional ripple structures (678 nm periodicity) are found to uniformly distribute over the laser-exposed areas, both of which are remarkably featured by the low spatial frequency. By altering the time delay among three laser beams, we can flexibly control the transition between the two surface structures. The experimental results are well explained by a physical model of the thermally correlated actions among three laser-material interaction processes. This investigation provides a simple, flexible, and controllable processing approach for the large-scale assembly of complex functional nanostructures on bulk semiconductor materials.