Pair creation energy and Fano factor of silicon in the energy range of soft X-rays

Abstract

The pair creation energy and the Fano factor of silicon are examined experimentally in the energy range of soft X-rays. Both quantities are shown to be a function of the energy of the absorbed radiation and of the detector temperature. For the pair creation energy our experimental data are in accordance with theory. The observed behaviour of the Fano factor cannot be explained by existing models.