Calculation of electron emission from a gated single nanowire

Abstract

The field-enhancement factor β on an individual nanowire with flattop was calculated analytically by the electrostatic method in a gated structure. To evaluate the influences of the geometrical parameters—including the gate-hole radius R, nanowire radius r0, nanowire length L, and gate-anode distance d2 for β—the authors proposed an ideal model of the gated single nanowire (L