Abstract
A novel hybrid multiple nanowire (NW) channels lateral diffused MOS (LDMOS) with extended drift, which combines the advantages of high breakdown voltage, low specific on-resistance, and superior electrical characteristics is presented. This hybrid NW LDMOS based on polycrystalline silicon thin-film transistor exhibits a high ON/OFF ratio (>104) , a low subthreshold slope of 192.6 mV/decade, a high breakdown voltage of 272.6 V, and low specific on-resistance of 161.8 m\Ω-cm2. © 2014 IEEE.
Author supplied keywords
Cite
CITATION STYLE
Tsai, J. Y., Hu, H. H., Wu, Y. C., Jhan, Y. R., Chen, K. M., & Huang, G. W. (2014). A novel hybrid poly-Si nanowire LDMOS with extended drift. IEEE Electron Device Letters, 35(3), 366–368. https://doi.org/10.1109/LED.2014.2299811
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
