Abstract
The effects of irradiating AlGaN/GaN micro-Hall sensors with 380 keV protons on were investigated by magnetoresistance measurements. The sheet resistance increased after irradiation with a proton dose of 1×10 13 cm-2 due to the decrease of carrier mobility rather than the decrease of sheet carrier density. Our experiments showed that AlGaN/GaN two-dimensional electron gas (2DEG) structures are good strong candidates for Hall sensors operable in harsh radiation environments. © Published under licence by IOP Publishing Ltd.
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CITATION STYLE
Okada, H., Abderrahmane, A., Koide, S., Takahashi, H., Sato, S., Ohshima, T., & Sandhu, A. (2012). Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-hall sensors. In Journal of Physics: Conference Series (Vol. 352). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/352/1/012010
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