Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs

Abstract

The molecular beam epitaxial growth and characteristics of 1.45 μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30 meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63 A cm2), large frequency response (f-3 dB =8 GHz), and near-zero α parameter and chirp. © 2006 American Institute of Physics.