Abstract
The performance of a cryogenically cooled double-crystal silicon monochromator was studied under high-heat-load conditions with total absorbed powers and power densities ranging from 8 to 780 W and from 8 to 240 W mm -2, respectively. When the temperature of the first crystal is maintained close to the temperature of zero thermal expansion of silicon, the monochromator shows nearly ideal performance with a thermal slope error of 0.6 mrad. By tuning the size of the first slit, the regime of the ideal performance can be maintained over a wide range of heat loads, i.e. from power densities of 110 W mm-2 (at total absorbed power of 510 W) to 240 W mm -2 (at total absorbed power of 240 W). © 2014 International Union of Crystallography.
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Chumakov, A. I., Sergeev, I., Celse, J. P., Rüffer, R., Lesourd, M., Zhang, L., & Sánchez Del Río, M. (2014). Performance of a silicon monochromator under high heat load. Journal of Synchrotron Radiation, 21(2), 315–324. https://doi.org/10.1107/S1600577513033158
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