Graphene nanoribbon transistors with high ION/IOFF ratio and mobility

Abstract

We report the realization of graphene nanoribbon (GNR) transistors with ION/IOFF ratio of 2 × 107 and electron and hole mobilities of 400 cm2/V.s and 1100 cm2/V.s respectively at 6 K. The nanoribbons were fabricated by Pt catalyzed etching of mechanically exfoliated graphene in hydrogen ambient. The performance parameters obtained are some of the best values ever reported. The high performance indicates the highly smooth edges along crystallographic directions in GNR obtained by the catalytic etching process.