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Low Resistive, Ohmic Contacts to Indium Tin Oxide

  • Weijtens C
  • van Loon P
Journal of The Electrochemical Society (1990) 137(12) 3928-3930
DOI: 10.1149/1.2086330
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Abstract

and have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of has been obtained after alloying at 450° or 500°C in .

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Weijtens, C. H. L., & van Loon, P. A. C. (1990). Low Resistive, Ohmic Contacts to Indium Tin Oxide. Journal of The Electrochemical Society, 137(12), 3928–3930. https://doi.org/10.1149/1.2086330

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