Abstract
… >Xe plasma FIB Delayering of IC based on 14 nm node... … Top-down delayering by low energy, broad-beam, argon ion milling — a solution for microelectronic device process control …
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APA
Oboňa, J. V., Hrnčíř, T., Sharang, Šikula, M., & Denisyuk, A. (2016). Xe plasma FIB Delayering of IC based on 14 nm node technology. Microscopy and Microanalysis, 22(S3), 56–57. https://doi.org/10.1017/s1431927616001136
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