CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Man Ho Kwan; K. Y. Wong; Y. S. Lin; F. W. Yao; M. W. Tsai; Y. C. Chang; P. C. Chen; R. Y. Su; C. H. Wu; J. L. Yu; F. J. Yang; G. P. Lansbergen; H. Y. Wu; M. C. Lin; C. B. Wu; Y. A. Lai; C. W. Hsiung; P. C. Liu; H. C. Chiu; C. M. Chen; C. Y. Yu; H. S. Lin; M. H. Chang; S. P. Wang; L. C. Chen; J. L. Tsai; H. C. Tuan; Alex Kalnitsky

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CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

Technical Digest - International Electron Devices Meeting, IEDM (2014) 2015-February(February) 17.6.1-17.6.4

DOI: 10.1109/IEDM.2014.7047073

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Abstract

CMOS-compatible 100/650 V enhancement-mode FETs and 650 V depletion-mode MISFETs are fabricated on 6-inch AlGaN/GaN-on-Si wafers. They show high breakdown voltage and low specific on-resistance with good wafer uniformity. The importance of epitaxial quality is figured out in a key industrial item: high-temperature-reverse-bias-stress-induced on-state drain curent degradation. Optimization of epitaxial layers shows significant improvement of device reliability.

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Kwan, M. H., Wong, K. Y., Lin, Y. S., Yao, F. W., Tsai, M. W., Chang, Y. C., … Kalnitsky, A. (2014). CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2015-February, pp. 17.6.1-17.6.4). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IEDM.2014.7047073

CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

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