Control of crystal orientation by imposition of a high magnetic field in a vapor-deposition process

Abstract

The nonmagnetic elements of zinc and bismuth were deposited onto a glass substrate under a high magnetic field of 5T. The substrate was set parallel to the magnetic field, in a chamber kept at a pressure of 10-3 Pa. Bismuth was deposited in the c-plane orientation which agreed with the theoretical prediction based on the magnetization energy. The experimental result that the orientation index in the c-plane increased with an increase in the distance between the target and the substrate, suggests that the radiation heat due to the laser heat source interrupted the crystal orientation in the vicinity of the target. On the other hand, the orientation of zinc which has a smaller absolute value of magnetic susceptibility than bismuth, did not clearly appear in a magnetic field of 5 T. It has been found that from the viewpoint of magnetization energy, the crystal orientation due to a magnetic field needs a magnetization energy density more than 100 J/m3.