Abstract
A low-cost lithographic technique to pattern poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene): [6,6] -phenylC61 -butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (Jsc), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT:PSS at 150°C increases Jsc from 2.44 to 3.03 mA/ cm2 improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures. © 2008 American Institute of Physics.
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CITATION STYLE
Emah, J. B., Curry, R. J., & Silva, S. R. P. (2008). Low cost patterning of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency. Applied Physics Letters, 93(10). https://doi.org/10.1063/1.2973342
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