LOCALIZED SUBSTRATE HEATING DURING ION IMPLANTATION.

Abstract

The enhanced etching of ion-implanted silicon nitride in buffered hydrofluoric acid has been studied as a function of beam current in an ion implantation system using rotating mechanical scan. Reduction of the enhancement due to annealing has been observed under conditions where an earlier model of target heating during ion implantation would predict no annealing. The implication of this observation for future beam heating calculations is explored briefly.