Fabrication of slanted Cu nanopillars with uniform arrays

Abstract

Slanted Cu nanopillars with uniform arrays were fabricated using slanted Si channel structures as templates. A slanted plasma etching technique was employed, utilizing a Faraday cage system for the formation of these slanted channel structures. The angle of the slanted channel structures was accurately controlled because ions entering the Faraday cage maintained their direction. After the slanted channel structures were formed, they were filled with Cu by electroless deposition. Chemical mechanical polishing was then used to remove the excess Cu film and the SiO2 masks. Finally, the remaining poly Si of the channel structures was removed by wet chemical etching. This work offers a novel method for the fabrication of slanted metal nanostructures with uniform arrays covering a large area.