Recent progress in atomic layer deposition of molybdenum disulfide: a mini review

Abstract

As a kind of specially modified chemical vapor deposition (CVD), atomic layer deposition (ALD) has long been used to fabricate thin films. The self-limiting reaction of ALD endows the films with excellent uniformity and precise controllability. The thickness of the films obtained by ALD can be controlled in an atomic scale (0.1 nm) on a large-area substrate even with complex structures. Therefore, it has recently been employed to produce the two-dimensional (2D) materials like MoS 2 . In this mini-review, the research progress in ALD MoS 2 is firstly summarized. Then the influences of precursors, substrates, temperature, and post-annealing treatment on the quality of ALD-MoS 2 are presented. Moreover, the applications of the obtained MoS 2 as an electrochemical catalysator are also described. Besides the perspective on the research of ALD of MoS 2 , the remaining challenges and promising potentials are also pointed out.