Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

Abstract

We have implanted boron (B) ions (dosage: 5×1014 cm -2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 m cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600°C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method. © 2008 National Institute for Materials Science.