Abstract
In situ real-time stress monitoring is used to study the kinetics of stress relaxation during molecular beam epitaxy growth of strained thin films of InxGa1−xAs/GaAs. We present measurements of the temperature-dependent relaxation behavior obtained at 443 and 469 °C. To study the relationship between the dislocation structure and the stress relaxation, samples were grown to different thicknesses for transmission electron microscopy (TEM) analysis. The combination of the information from the real-time stress monitoring and observations from TEM provides insight into the mechanisms of stress relaxation.
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CITATION STYLE
Lynch, C., Chason, E., Beresford, R., Chen, E. B., & Paine, D. C. (2002). Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 20(3), 1247–1250. https://doi.org/10.1116/1.1463722
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