Hybrid InGaP nanobeam on silicon photonics for efficient four wave mixing

Abstract

We report the design, fabrication, and characterization of a photonic crystal microresonator exhibiting a constant free spectral range. More than 50 resonances with Q > 2 × 105 are observed in a 200 μm long and 650 nm wide III-V semiconductor cavity heterogeneously integrated on a silicon photonic circuit (Silicon on Insulator). We measured stimulated four wave mixing with a -12 dB signal to idler conversion. Two photon absorption is prevented owing to the wide electronic bandgap of the III-V semiconductor (indium gallium phosphide) enabling the possibility to use sufficiently large optical power densities for efficient nonlinear parametric interactions.