Diamond lateral FinFET with triode-like behavior

Abstract

In this letter we report a diamond lateral FinFET fabricated using an ohmic regrowth technique. The use of ohmic regrowth separates the source/drain and gate fabrication, providing a viable means to improve ohmic contact resistance while protecting the top surface of the diamond channel from dry etch damage. Enabled by high channel quality, the diamond transistor behavior was shown to transit from a pentode-like to a triode-like characteristic when channel length decreased. For the first time, space charge limited transport in diamond FinFETs with a short channel length was demonstrated. We have analyzed the space charge limited transport from room temperature to 150 °C. This space charge limited transport, in combination with improved ohmic contacts, will enable diamond FinFETs for various high-power applications.