Time delay effect on a positive deep UV resist using partially tetrahydropyranyl-protected polyvinylphenol

Abstract

Chemical amplification positive resists using partially tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for deep UV lithography. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl) iodonium triflate resolved 0.30-μm line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm2. Post-exposure delay effect of this resist system was studied. The deprotection reaction of THP-M for lower dose during the holding time at room temperature and incomplete deprotection reaction for higher dose were found to deteriorate the exposure characteristics. © 1993, The Society of Photopolymer Science and Technology(SPST). All rights reserved.