Capacitive behavior of single gallium oxide nanobelt

Abstract

In this research, monocrystalline gallium oxide (Ga 2 o 3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga 2 o 3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga 2 o 3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga 2 o 3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga 2 o 3 /Pt structure.