Abstract
We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 × 1017 cm-3 to 9.5 × 1018 cm-3 using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Γ-point we estimate m⊥* = 0.047m 0 and m∥* = 0.039m0 for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm2/(Vs) to 800 cm2/(Vs) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
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CITATION STYLE
Hofmann, T., Chavdarov, T., Darakchieva, V., Lu, H., Schaff, W. J., & Schubert, M. (2006). Anisotropy of the Γ-point effective mass and mobility in hexagonal InN. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 3, pp. 1854–1857). https://doi.org/10.1002/pssc.200565467
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