Abstract
Room temperature pulsed operation of InGaAsP (1.3 μm)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above room temperature operation has also been realized for the first time with maximum operation temperature of 66°C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively. All of these threshold currents are the lowest ever reported for InGaAsP/InP surface emitting lasers at these temperatures. © 1991 IEEE
Cite
CITATION STYLE
Mille, B. I., Koren, U., Young, M. G., Dudley, J. J., Bowers, J. E., Hu, E. L., & Merz, J. L. (1991). Low-Threshold, High-Temperature Pulsed Operation of InGaAsP/InP Vertical Cavity Surface Emitting Lasers. IEEE Photonics Technology Letters, 3(11), 977–979. https://doi.org/10.1109/68.97832
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