Abstract
To improve the performance of optoelectronic devices, a high performance wide angle SiO/TiO Distributed Bragg Reflector (DBR) mirror was designed and fabricated on double polished sapphire substrate. 17-pairs gradually varied DBR structure was applied in order to acquire a broad stopband reflectivity over 95% from 400 nm to 800 nm, covering the whole visible light region. The DBR mirrors deposited at the backside of optoelectronics devices are also demonstrated to remain a high reflectivity at wide incident angles, which improves the emission efficiency of LEDs and light absorption efficiency of InGaN/GaN photoelectrochemical cell (PEC).
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CITATION STYLE
Zhi, T., Tao, T., Liu, B., Yan, Y., Xie, Z., Zhao, H., & Chen, D. (2021). High Performance Wide Angle DBR Design for Optoelectronic Devices. IEEE Photonics Journal, 13(1). https://doi.org/10.1109/JPHOT.2021.3050761
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