Abstract
We report on a comprehensive study of the 3-D profile transformation process for microstructures on silicon-on-insulator (SOI) substrates. Using hydrogen annealing, single crystalline microspheres (1 μm radius), micropillars, and circular cantilever beams have been successfully demonstrated. The annealed Si exhibits a surface roughness of 0.26 nm. A theoretical model is presented for the mass transport process, and the parametric dependence on temperature and pressure is characterized. We have used this process to fabricate sub-micrometer single mode optical waveguides on SOI and achieved a very low optical loss of 0.2 cm -1. © 2005 IEEE.
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CITATION STYLE
Lee, M. C. M., Yao, J., & Wu, M. C. (2005). Silicon profile transformation and sidewall roughness reduction using hydrogen annealing. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 596–599). https://doi.org/10.1109/MEMSYS.2005.1454000
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