Abstract
A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Another advantage for this scheme is a better vacuum level because all material can be high temperature annealed before final encapsulation. This study also demonstrated some MEMS devices using this new scheme, including resonators, accelerometers and magnetometers. © 2012 IEEE.
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CITATION STYLE
Cheng, C. W., Liang, K. C., Chu, C. H., Lee, T. H., Lee, J. K., Lin, C. H., … Horsley, D. A. (2012). Bulk-Si with poly bump process scheme for MEMS sensors. In Proceedings of IEEE Sensors. https://doi.org/10.1109/ICSENS.2012.6411212
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