Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeBMgOCoFeB magnetic tunnel junctions

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Abstract

We investigated the spin-torque diode effect in submicron-scale Co60 Fe20 B20 MgO (Cox Fe1-x)80 B20 (0≤x≤0.9) magnetic tunnel junctions (MTJs) under perpendicular magnetic fields Hext up to 10 kOe. A single peak was clearly observed in every spin-torque diode spectrum and the dependence of resonant frequency fres on Hext was well explained by using Kittel's formula. It was found that effective demagnetizing fields in the perpendicular-to-plane direction of the Fe-rich CoFeB free layers obtained from the spectra were considerably smaller than those expected from the magnetizations of the free layers. This suggested that the Fe-rich CoFeB free layers exhibited a perpendicular magnetic anisotropy, which agreed well with the reduced switching current density in the MTJs. © 2009 American Institute of Physics.

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Yakata, S., Kubota, H., Suzuki, Y., Yakushiji, K., Fukushima, A., Yuasa, S., & Ando, K. (2009). Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeBMgOCoFeB magnetic tunnel junctions. Journal of Applied Physics, 105(7). https://doi.org/10.1063/1.3057974

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