Luminescence from pulsed-laser-deposited (Sr0.7Ba 0.3)2SiO4:Eu2+ thin-film phosphors

Abstract

Thin-film (Sr,Ba) 2 SiO4: Eu2+ phosphors were pulsed-laser deposited on quartz glass, sapphire, and Si wafers. The processing conditions were optimized to reduce substrate temperature during deposition and also to avoid high-temperature postdeposition annealing and reduction. In this study, the maximum processing temperature was reduced to 700°C, which must be lowered even further to produce on-chip phosphor films. The exact composition of the film obtained under the optimum processing conditions was identified by Rietveld refinement analysis, and two-peak emission behavior was investigated based on the exact structure. © 2008 The Electrochemical Society.