Abstract
High power density is an advance in power electronics. Third generation wide-bandgap semiconductor devices (WBG SICs) offer significantly improved performance compared to standard silicon devices. SIC MOSFET is commonly used in power electronic equipment such as converters due to its low resistance, excellent thermal stability, and rapid switching speed. Increasing the switching frequency effectively reduces the circuit size. This article uses SIC MOSFET and STM32 single-chip MCU to design a high power density and higher frequency buck boost converter and establish a simulation model in LTspice. The driving circuit designed for SIC MOSFET is intended to maximize the converter's reliability. Synchronous rectification applies to enhance the converter efficiency. Compared to other types of converters, the size of the converter is reduced, achieving the goals of lightweight and high power density of DC/DC converters.
Cite
CITATION STYLE
Rana, Z., Meng, R., Ali, K., & Haseeb, R. (2024). High Power Density Buck Boost DC/DC Converter Using SIC MOSFET. In Journal of Physics: Conference Series (Vol. 2774). Institute of Physics. https://doi.org/10.1088/1742-6596/2774/1/012099
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