Improved memory characteristics by NH3 post annealing for ZrO2 based charge trapping nonvolatile memory

Abstract

Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effects of post annealing atmosphere (NH3 and N2) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at 150°C, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using NH3 annealing. © 2014 KIEEME. All rights reserved.