Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy

Abstract

Hydride vapor phase epitaxy (HVPE) is a promising technique for fabricating low-cost III-V solar cells. This letter highlights the fast growth of InGaP single-junction solar cells via HVPE. High-quality InGaP layers without decomposition are obtained at a growth temperature of 660 °C. InGaP growth rate increases with increasing gaseous hydrogen chloride (HCl) flow rate to group III metals. Herein, the highest rate of 54 μm h-1 is achieved on InGaP growth. Furthermore, InGaP single-junction solar cells grown with high growth rate exhibit good performance under an air mass 1.5 global solar spectrum.