Intrinsic memristive mechanisms in 2D layered materials for high-performance memory

Abstract

Two-dimensional layered materials such as graphene and transition metal dichalcogenides are promising candidates for developing high-density low-power next-generation memory. This Perspective reviews two major intrinsic memristive mechanisms in two-dimensional layered materials: polarization switching and resistive switching, which have high potentials for ferroelectric random access memory and in-memory computing, respectively. The potentials and challenges of these mechanisms for high-performance memory are also discussed with a futuristic insight.