Abstract
A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2-D simulation results well. This indicates that both Vth shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as Nbody, Tsi, Tox, etc. © 2006 IEEE.
Cite
CITATION STYLE
Lin, C. H., Dunga, M. V., Niknejad, A. M., & Hu, C. (2006). A compact quantum-mechanical model for double-gate MOSFET. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1272–1274). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306111
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