A new 28nm high-k metal gate CMOS logic one-time programmable memory cell

Abstract

This work presents a high density high-k metal gate (HKMG) one-time programmable (OTP) cell. Without additional processes and steps, this OTP cell is fully compatible to 28nm HKMG CMOS process. The OTP cell adopts high-k dielectric breakdown as programming mechanism to obtain more than 105 times of on/off read window. Moreover, it features low power and fast program speed by 4.5V program voltage in 100 μs. In addition to the ultrasmall cell area of 0.0425μm2, the superior performance of disturb immunities and data retention further support the new logic OTP cell to be a very promising solution in advanced logic non-volatile memory (NVM) applications. © 2014 The Japan Society of Applied Physics.