The effect of high non-hydrostatic pressure on III-V semiconductors: Zinc blende to wurtzite structural phase transition and multiphase generation

Abstract

Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structural phases localized in different micrometric regions of the same sample: the zinc blende to possibly wurtzite structural phase transition and the generation of a multiphase state. © Published under licence by IOP Publishing Ltd.