Optical studies of undoped and doped wide bandgap carbide and nitride semiconductors

Abstract

The wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescence, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature. Photoluminescence studies were carried out as a function of temperature to detect and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscopy was used to measure the binding energy of donors and their concentration.