Abstract
Metal halide perovskites (MHPs) have been intensively investigated for use in solar cells and light-emitting diodes. However, the research into their applications in thin film transistors (TFTs) has drawn less attention, in spite of their high intrinsic charge mobility. In this Perspective, we provide a brief overview of the development of high-performance Sn-based perovskite TFTs. Initially, the advantages of Sn-based MHPs for TFTs are defined. Next, some recent studies on improving the device performance are introduced. Finally, challenges that need to be addressed to achieve high-performance TFTs are highlighted.
Cite
CITATION STYLE
You, I., & Noh, Y. Y. (2021, June 21). Toward high-performance p-type, tin-based perovskite thin film transistors. Applied Physics Letters. American Institute of Physics Inc. https://doi.org/10.1063/5.0051382
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