Flexible high capacitance gate insulators for organic field effect transistors

Abstract

We have manufactured flexible field effect transistors with both polymeric and low molecular weight organic semiconductors onto a very thin (6.5 nm) gate insulator with capacitance in excess of 600 nF cm-2. Gate insulators were prepared by anodization of a sputtered aluminium film on a Mylar plastic sheet. Anodization protocols in very dilute acid and in pure water, were explored and results compared.