Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate

Abstract

An analytical modelling has been carried out for an ion-implanted GaAs MESFET having a Schottky gate opaque to incident radiation. The radiation is absorbed in the device through the spacings of source, gate, and drain unlike the other model where gate is transparent/semitransparent [1]. Continuity equations have been solved for the excess carriers generated in the neutral active region, the extended gate depletion region and the depletion region of active (n) and substrate (p) junction. The photovoltage across the channel and the p-layer junction and that across the Schottky junction due to generation in the arc region of the gate depletion layer are the two important controlling parameters. The I-V characteristics and the transconductance of the device have been evaluated and discussed. © 1998 IEEE.