Abstract
In article number 1803563, Feng Wang, Ye Zhou, Su-Ting Han, and co-workers develop an NIR photonic memristor based on a MoS2?upconversion nanoparticle heterostructure. The heterostructure, acting as exciton generation/separation centers, remarkably improves NIR-light-controlled memory performance. Meanwhile, the as-fabricated photonic memory array also displays high integration with photodetectors, and can be used to make a core component of a bioinspired vision system.
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CITATION STYLE
Zhai, Y., Yang, X., Wang, F., Li, Z., Ding, G., Qiu, Z., … Han, S. (2018). Photonic Memory: Infrared‐Sensitive Memory Based on Direct‐Grown MoS 2 –Upconversion‐Nanoparticle Heterostructure (Adv. Mater. 49/2018). Advanced Materials, 30(49). https://doi.org/10.1002/adma.201870377
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