Journal ArticleOPEN ACCESS

Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities

  • Sogoyan A
  • Artamonov A
  • Nikiforov A
  • et al.
Facta universitatis - series: Electronics and Energetics (2014) 27(3) 329-338
DOI: 10.2298/fuee1403329s
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Abstract

A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma- and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.nema

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APA

Sogoyan, A., Artamonov, A., Nikiforov, A., & Boychenko, D. (2014). Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities. Facta Universitatis - Series: Electronics and Energetics, 27(3), 329–338. https://doi.org/10.2298/fuee1403329s

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